发明名称 FIELD EMISSION-TYPE ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A field emission-type electron source is provided to prevent a popping appearance and an irregularity within a display, to increase an amount of an emitted electron, and to exhibit a high efficiency of electron emission. CONSTITUTION: A field emission-type electron source(10) is provided with a conductive substrate(1), a semiconductor layer formed on a surface of the conductive substrate(1), at least a part of the semiconductor layer being made porous, and a conductive thin film(7) formed on the semiconductor layer. Electrons injected into the conductive substrate(1) are emitted from the conductive thin film(7) through the semiconductor layer by applying a voltage between the conductive thin film(7) and the conductive substrate(1) in such a manner that the conductive thin film(7) acts as a positive electrode against the conductive substrate(1). The semiconductor layer includes a porous semiconductor layer(6) in which columnar structures and porous structures composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film. Further, an average dimension of each of the porous structures in a thickness direction of the semiconductor layer is smaller than or equal to 2 micrometers.
申请公布号 KR20010020773(A) 申请公布日期 2001.03.15
申请号 KR20000021511 申请日期 2000.04.22
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 KOSHIDA NOBUYOSHI;AIZAWA KOICHI;HATAI TAKASHI;KOMODA TAKUYA;HONDA YOSHIAKI;KONDO YUKIHIRO;ICHIHARA TSUTOMU;WATABE YOSHIFUMI
分类号 H01J31/12;H01J1/304;H01J1/312;H01J9/02;(IPC1-7):H01J31/12 主分类号 H01J31/12
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