| 摘要 |
PURPOSE: A photoresist copolymer containing cross-linking agent as its monomer is provided to achieve excellent durability, etching-resistance, reproducibility and resolution, and to reinforce adhesiveness. CONSTITUTION: A photoresist copolymer containing cross-lining agent having two double bonds as its monomer is represented by formula 1, where R1, R2, R3, R4, R5 and R6 are alkyl groups having 1-5 carbon atoms, R7 and R8 are H or CH3, and k is integer number of 0-3. The photoresist composition can form ultra-micro pattern of not only 1G or less DRAM but also 4G and 16G DRAM by means of far infrared light source.
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