发明名称 METHOD FOR PROCESSING WAFER OF SINGLE-WAFER-TYPE SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE: A method for processing a wafer of a single-wafer-type semiconductor manufacturing equipment is provided to guarantee repeatability of a capacitor, by preventing an unnecessary hemispherical grain from growing while a wafer is in a stand-by state in a chamber for forming the hemispherical grain. CONSTITUTION: A predetermined treatment is peformed while a wafer is placed on a susceptor in a temporary process chamber. A wafer supporting unit is elevated to prevent the predetermined treatment from proceeding so that the wafer is separated from the susceptor. The wafer is checked whether the wafer can be transferred to another process chamber. If the wafer cannot be transferred, the wafer supporting unit continuously stands by while the wafer supporting unit is elevated, until the wafer can be transferred to another process chamber. If the wafer can be transferred, the wafer is transferred to another process chamber.
申请公布号 KR20010018996(A) 申请公布日期 2001.03.15
申请号 KR19990035192 申请日期 1999.08.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, JAE HO;HWANG, GI HYEON;LEE, SE JIN;LEE, SEUNG JIN
分类号 H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/68
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