发明名称 |
SOURCE CHAMBER APPARATUS OF SEMICONDUCTOR IMPLANTER |
摘要 |
PURPOSE: A source chamber apparatus of a semiconductor implanter is provided for easy handle and safety, by installing a gas supply pipe in one side of an arc chamber, a filament in the other side of the arc chamber and a solid source inside the arc chamber so that a solid material is used as an ion implantation source. CONSTITUTION: A filament(13) generates thermal electrons. A gas supply pipe supplies process gas. An extraction electrode(15) extracts positive ions. The gas supply pipe(12) is installed in one side of an arc chamber(11). The filament is installed in the other side of the arc chamber. A solid source(14) is installed inside the arc chamber. The extraction electrode is installed in the front of the arc chamber. The thermal electrons generated by the filament are attracted toward the arc chamber because the arc chamber is positive compared with the filament while colliding with gas supplied through the gas supply pipe to form plasma. If positive ions of plasma collide with the negative solid source, a conversion material is ejected wherein the conversion material becomes an ion implantation source.
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申请公布号 |
KR20010019004(A) |
申请公布日期 |
2001.03.15 |
申请号 |
KR19990035203 |
申请日期 |
1999.08.24 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
PARK, YANG SU |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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