| 摘要 |
<p>PURPOSE: A structure of metal line, a semiconductor device, and a method for manufacturing a semiconductor device are provided to reduce a non-resistance by using a copper as a main component. CONSTITUTION: Insulating layers(22,26) are formed on a semiconductor substrate(10). An aperture portion is formed on the insulating layers(22,26). The aperture portion is buried and a metal line(42) is formed thereon. The metal layer(42) has a barrier layer(34), a contact layer(36), and metal line material(38,40). The barrier layer(34) is formed to cover inner walls of the aperture portion(30,32). The contact layer(36) including zirconium is formed to cover the barrier layer(34). The metal line material(38,40) has a copper as a main component.</p> |
