| 摘要 |
PURPOSE: A method for forming PGO films useful for memory cells of 1T type FeRAMs is provided to optimize the ferroelectric characteristics of the PGO film .by MOCVD using organic materials to obtain c-axis oriented films. CONSTITUTION: The method of forming a c-axis oriented polycrystalline lead germanate (PGO) film on an integrated circuit(IC) film comprises step(102) of mixing Pb(thd)2 with Ge(ETO)4 to form a PGO mixture having a mol ratio of about 4.5:3-5.5:3, step(104) of dissolving the mixture in step(102) with solvents of tetrahydrofuran, isopropanol and tetraglyme to produce a precursor soln., step(106) of producing a precursor gas from the soln. produced in step(104), step(108) of decomposing the precursor gas produced in step(106) on a wafer, step(110) of forming a PGO film contg. a first phase of Pb5Ge3O11, and step(112a)of orienting crystals mainly to the c-axis in the Pb5Ge3O11 phase of the PGO film. |
