发明名称 THIN-FILM ELECTRON SOURCE, PROCESS FOR MANUFACTURING THIN-FILM ELECTRON SOURCE, AND DISPLAY
摘要 A process for manufacturing a thin-film electron source including a lower electrode (11), an upper electrode, and an insulating layer sandwiched between the lower electrode (11) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode (11) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode (11) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer (26) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.
申请公布号 WO0118839(A1) 申请公布日期 2001.03.15
申请号 WO1999JP04820 申请日期 1999.09.06
申请人 HITACHI, LTD.;KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI;SAGAWA, MASAKAZU;OKAI, MAKOTO;ISHIZAKA, AKITOSHI 发明人 KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI;SAGAWA, MASAKAZU;OKAI, MAKOTO;ISHIZAKA, AKITOSHI
分类号 H01J1/312;H01J9/02;(IPC1-7):H01J1/30;H01J29/04;H01J31/12 主分类号 H01J1/312
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