发明名称 |
THIN-FILM ELECTRON SOURCE, PROCESS FOR MANUFACTURING THIN-FILM ELECTRON SOURCE, AND DISPLAY |
摘要 |
A process for manufacturing a thin-film electron source including a lower electrode (11), an upper electrode, and an insulating layer sandwiched between the lower electrode (11) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode (11) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode (11) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer (26) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.
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申请公布号 |
WO0118839(A1) |
申请公布日期 |
2001.03.15 |
申请号 |
WO1999JP04820 |
申请日期 |
1999.09.06 |
申请人 |
HITACHI, LTD.;KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI;SAGAWA, MASAKAZU;OKAI, MAKOTO;ISHIZAKA, AKITOSHI |
发明人 |
KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI;SAGAWA, MASAKAZU;OKAI, MAKOTO;ISHIZAKA, AKITOSHI |
分类号 |
H01J1/312;H01J9/02;(IPC1-7):H01J1/30;H01J29/04;H01J31/12 |
主分类号 |
H01J1/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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