HIGH-FREQUENCY POWER AMPLIFICATION MODULE AND RADIO COMMUNICATION DEVICE

摘要

A high-frequency power amplification module comprises a plurality of cascaded heterojunction bipolar transistors (npn type HBT). A protective circuit including a series circuit of a plurality of pn-junction diodes is connected between the collector and emitters of the HBTs, with the collectors connected to the p-side of the diodes and the emitters connected to the n-side of the diodes. A protective circuit including a series circuit of a plurality of pn-junction diodes is connected between the bases and emitters, with the bases connected to the p-side of the diodes and the emitters connected to the n-side of the diodes. If an excessive voltage is applied between the collector and the emitter or between the base and the emitter because of the change in antenna load or in the assembly of the module, the clamping of the protection circuit protects the HBTs against damage.