| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a characteristic of the semiconductor device from being degraded and to improve yield and reliability, by forming Si-rich oxynitride layers on an upper portion and a sidewall of a conductive layer pattern, and by easily performing a self-aligned contact process. CONSTITUTION: A conductive layer(31) is formed on a semiconductor substrate, and the first Si-rich oxynitride layer(33) containing 5-30 percent by volume of amorphous silicon or polysilicon is formed on the conductive layer. The first Si-rich oxynitride layer is plasma-processed to form an oxide layer on the first Si-rich oxynitride layer. The conductive layer is patterned to form a conductive interconnection. A spacer is formed on a sidewall of the conductive interconnection with the second Si-rich oxynitride layer(37) containing 5-30 percent by volume of amorphous silicon or polysilicon.
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