METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a contact plug from being fallen when stress of an upper electrode occurs, by forming an oxide layer spacer on a sidewall of the contact plug connecting a capacitor with an active region of a semiconductor substrate. CONSTITUTION: The first insulating layer is formed on a semiconductor substrate(100) having interconnections. A contact plug(108) is formed between the interconnections. The first insulating layer is etched to expose a part of the interconnections. The second insulating layer is formed on the entire surface of the semiconductor substrate. The second insulating layer is etched to expose the first insulating layer, and a spacer(122) is formed on a sidewall of the contact plug. After the third insulating layer is formed on the entire surface of the semiconductor substrate, a planarizing etch process is performed to expose an upper portion of the contact plug.