DIGITAL X-RAY IMAGING DEVICE

摘要

A semiconductor image detection device (112) is provided for use in a digital X-ray image detection head including a sheet of scintillating material having a top surface and a bottom surface for emitting optical energy in response to X-ray energy impinged on the top surface. The image detection device (112) is operative to develop an image data signal in response to energy impinged thereon via the scintillating material. The image detection device (112) includes a substrate assembly (120) and a plurality of electrodes (132-136) formed over the substrate assembly (120). The substrate assembly (120) includes: an N-type layer (122) having a top surface; at least one P-type layer (124, 126) formed over the top surface of the N-type layer (122); and a buried channel (128) formed in the P-type layer (126) proximate the top surface of the P-type layer (126), the buried channel layer (128) having charge storage regions (138) formed therein. A P-N junction is formed between the top surface of the N-type layer (122) and the P-type layer (124). The P-N junction forms a potential barrier (130) for substantially preventing electron-hole pairs generated in the N-type layer (122) from diffusing upward toward the charge storage regions (138) of the buried channel (128).