发明名称 APPARATUS FOR SUPPLYING REACTION GAS IN SEMICONDUCTOR PROCESS CHAMBER
摘要 PURPOSE: An apparatus for supplying reaction gas in a semiconductor process chamber is provided to increase surface uniformity of a wafer, by uniformly supplying the reaction gas to the surface of the wafer so that the reaction gas deposited on the wafer can be uniformly distributed. CONSTITUTION: A susceptor(40) is installed to be capable of elevating so that a wafer(50) can be settled in an inner center of a process chamber(20). A plurality of gas inducing pipes(62,64) are vertically installed on a circumference of the susceptor to induce reaction gas into the chamber. A gas circulation pipe(66) of a ring type is horizontally coupled to the respective portions of the gas inducing pipes to uniformly supply the reaction gas to the surface of the wafer. A gas exhaust pipe(14) is installed downward in a side of the process chamber to exhaust gas after reaction.
申请公布号 KR20010019989(A) 申请公布日期 2001.03.15
申请号 KR19990036671 申请日期 1999.08.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, JAE HONG;KIM, JAE HWAN;KIM, JONG SIK;SHIN, HYEON JIN
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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