发明名称 |
APPARATUS FOR SUPPLYING REACTION GAS IN SEMICONDUCTOR PROCESS CHAMBER |
摘要 |
PURPOSE: An apparatus for supplying reaction gas in a semiconductor process chamber is provided to increase surface uniformity of a wafer, by uniformly supplying the reaction gas to the surface of the wafer so that the reaction gas deposited on the wafer can be uniformly distributed. CONSTITUTION: A susceptor(40) is installed to be capable of elevating so that a wafer(50) can be settled in an inner center of a process chamber(20). A plurality of gas inducing pipes(62,64) are vertically installed on a circumference of the susceptor to induce reaction gas into the chamber. A gas circulation pipe(66) of a ring type is horizontally coupled to the respective portions of the gas inducing pipes to uniformly supply the reaction gas to the surface of the wafer. A gas exhaust pipe(14) is installed downward in a side of the process chamber to exhaust gas after reaction.
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申请公布号 |
KR20010019989(A) |
申请公布日期 |
2001.03.15 |
申请号 |
KR19990036671 |
申请日期 |
1999.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, JAE HONG;KIM, JAE HWAN;KIM, JONG SIK;SHIN, HYEON JIN |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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