| 摘要 |
PURPOSE: A method for forming an interlayer dielectric layer of a semiconductor device is provided by using an inorganic SOG layer having an excellent gap fill property and a good planarity and allowing a low temperature heat treatment. CONSTITUTION: A method for forming an interlayer dielectric layer includes a step of depositing an inorganic SOG layer instead of a conventional BPSG layer as the interlayer dielectric layer over a semiconductor substrate on which an underlying structure is formed, and a step of removing impurities in the inorganic SOG layer by a rapid thermal process or a reaction furnace anneal process. Preferably, silicon dioxide may be used for the inorganic SOG layer. While the rapid thermal process may be performed at a temperature of 750 to 950 deg. C, the reaction furnace anneal process may be performed at a temperature of 650 to 850 deg. C. In addition, after the removal of impurities, a capping layer may be further formed to suppress a hygroscopic property.
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