SUBSTRATE-ETCHING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A substrate-etching method and a manufacture of semiconductor device are provided to etch an oxide layer on a nitride layer provided on a substrate at a high selective ratio. CONSTITUTION: The substrate-etching method includes a process, where the oxide layer on a substrate is plasma-etched with mixed gas which contains carbon and fluorine gas, and a nitrogen-containing gas. For nitride layer formed under the oxide layer, SixNy seeds are formed and deposited on the nitride layer, to substantially balance the etching of the nitride layer, so that the oxide layer can be etched at a high selective ratio on the nitride layer.