发明名称 |
APPARATUS AND METHOD FOR DETECTING END POINT IN CHEMICAL MECHANICAL POLISHING PROCESS |
摘要 |
PURPOSE: A method is provided to precisely detect an end point in a chemical mechanical polishing(CMP) process, by an electrical chemical method which is proved to be a precise analysis. CONSTITUTION: Slurry solution used as a polishing agent in a chemical mechanical polishing(CMP) process is provided. A constant potential difference is applied to the slurry solution to deoxidize metal ions included in the slurry solution. A quantity of current flowing in the slurry solution is detected by the deoxidation. A variation of a content ratio of the metal ions included in the slurry solution is analysed to detect an end point by a variation of the quantity of current.
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申请公布号 |
KR20010018823(A) |
申请公布日期 |
2001.03.15 |
申请号 |
KR19990034934 |
申请日期 |
1999.08.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA, SANG ROK;LEE, GEUN TAEK;LEE, SEON JEONG |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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