发明名称 APPARATUS AND METHOD FOR DETECTING END POINT IN CHEMICAL MECHANICAL POLISHING PROCESS
摘要 PURPOSE: A method is provided to precisely detect an end point in a chemical mechanical polishing(CMP) process, by an electrical chemical method which is proved to be a precise analysis. CONSTITUTION: Slurry solution used as a polishing agent in a chemical mechanical polishing(CMP) process is provided. A constant potential difference is applied to the slurry solution to deoxidize metal ions included in the slurry solution. A quantity of current flowing in the slurry solution is detected by the deoxidation. A variation of a content ratio of the metal ions included in the slurry solution is analysed to detect an end point by a variation of the quantity of current.
申请公布号 KR20010018823(A) 申请公布日期 2001.03.15
申请号 KR19990034934 申请日期 1999.08.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA, SANG ROK;LEE, GEUN TAEK;LEE, SEON JEONG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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