| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to reduce a charge trap density caused by high electric field in a drain region and to reduce a resultant hot carrier effect. CONSTITUTION: After a device isolation layer(20) is formed in a semiconductor substrate(10), a p-well and an n-well are formed in the substrate(10). Next, nitrogen ions are implanted into the wells with ultra low energy, and a gate oxide layer(30) and a doped polysilicon layer(40) are stacked thereon in sequence. The implanted nitrogen ions are then diffused to an interface between the substrate(10) and the gate oxide layer(30) by a rapid thermal process, so that the nitrogen ions are piled up to reduce interface trap. Thereafter, a silicide layer(50) is stacked, and a gate electrode(70) and a sidewall spacer(60) are formed. The implantation of the nitrogen ions is preferably performed at energy of 15KeV and below.
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