发明名称 CIRCUIT FOR REDUCING ELECTRON MAGNETIC INTERFERENCE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A circuit for reducing electron magnetic interference(EMI) of a semiconductor device is provided to reduce the EMI of a semiconductor chip by a spectrum spread effect, by outputting an output signal of which a pulse width is varied. CONSTITUTION: A division circuit(10) outputs a division signal which is obtained by dividing the first input signal applied from the exterior by a predetermined division rate. A level shifter(20) shifts a voltage level of the division signal from the division circuit. The first filter(30) filters the division signal from the level shifter. The second filter(40) filters the second input signal from the exterior. The first comparing circuit outputs the first output signal which compares the first input signal with the first division signal from the first filter. The second output driving unit outputs the second output signal which compares the first input signal with the second input signal from the second filter.
申请公布号 KR20010019350(A) 申请公布日期 2001.03.15
申请号 KR19990035705 申请日期 1999.08.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, YEONG HWAN
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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