| 摘要 |
PURPOSE: To obtain a semiconductor device, where MOS transistor of two different structure, a SAC(self-aligned contact) structure and a MOS transistor, are provided jointly. CONSTITUTION: Gate electrodes 3 of gate structures GT11 to GT13 are covered with an upper nitride film 4 and a sidewall nitride film 5, so that the upper nitride film 4 and the sidewall nitride film 5 are not removed, when an interlayer insulating oxide film 10 is selectively removed so as to form contact holes CH1 and CH2, and a gate electrode 3 can be prevented from being exposed. Especially, in the gate structures GT11 and GT12, a short circuit does not occur between a conductor layer CL1 and the gate electrode 3, even if the contact hole CH1 gets out of position on either side, so that the gate structures GT11 and GT12 can be arranged without being limited by the superposition margin of the contact hole CH1, so that a semiconductor device of this constitution can attain high degree of integration by shortening gates in gate space.
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