| 摘要 |
A metal pattern for heat dissipation is formed on the backside of a second semiconductor substrate, the metal pattern being in contact with a first semiconductor element mounted on a semiconductor device adjacent to the backside. Vias are formed on the peripheries of semiconductor substrates, the vias penetrating in the thickness direction to transmit heat. The vias and the metal pattern for heat dissipation are connected to each other on the backside of the semiconductor substrate. Solder balls disposed between the semiconductor devices transmit heat having been transmitted to the metal pattern of the semiconductor device to the vias of the semiconductor device adjacent to the backside of the semiconductor device having the metal pattern.
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