| 发明名称 |
METHOD FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICE |
| 摘要 |
<p>In a fabrication process for semiconductor devices having a crystalline semiconductor film formed on a substrate, said semiconductor film being an active layer of a transistor and being mainly composed of silicon and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film; in which the semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably. <IMAGE></p> |
| 申请公布号 |
EP1083590(A1) |
申请公布日期 |
2001.03.14 |
| 申请号 |
EP20000900401 |
申请日期 |
2000.01.14 |
| 申请人 |
SEIKO EPSON CORPORATION;MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIYASAKA, MITSUTOSHI;OGAWA, TETSUYA;TOKIOKA, HIDETADA;SATOH, YUKIO;INOUE, MITSUO;SASAGAWA, TOMOHIRO |
| 分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L29/04;(IPC1-7):H01L21/20;H01L29/786 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
