| 摘要 |
A field-effect semiconductor device (41;61) including a channel layer (44;64); a barrier structure (45;65) formed on the channel layer (44;64) and including a plurality of semiconductor layers (45a,45b,45c;65a,65b,65c); a plurality of ohmic electrodes (48,49;68,69) formed above the barrier structure (45;65); and a Schottky electrode (50;70) formed on the barrier structure (45;65) between the ohmic electrodes (48,49;68,69). The barrier structure (45;65) has an electron-affinity less than that of the channel layer (44;64) and includes at least two heavily doped layers (45a,45c;65a,65c) and a lightly doped or undoped layer (45b;65b) provided therebetween. <IMAGE> |
