发明名称 |
Method for producing semiconductor device |
摘要 |
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.
|
申请公布号 |
US2001000011(A1) |
申请公布日期 |
2001.03.15 |
申请号 |
US20000726337 |
申请日期 |
2000.12.01 |
申请人 |
ZHANG HONGYONG;TAKAYAMA TORU |
发明人 |
ZHANG HONGYONG;TAKAYAMA TORU |
分类号 |
H01L21/20;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|