发明名称 |
A method to create a copper dual damascene structure with less dishing and erosion |
摘要 |
<p>A dual damascene structure is created in a dielectric layer (16,40), the structure contains a barrier layer (20,42) while a cap layer (18) may or may not be provided over the layer of dielectric for further protection of the dual damascene structure. The surface of the copper (24,44) in the dual damascene structure is recessed, a thin film (30,34) is deposited and planarized/partially removed by either CMP or a plasma etch thereby providing a sturdy surface above the copper of the dual damascene structure that prevents dishing and erosion of this surface. <IMAGE></p> |
申请公布号 |
EP1083596(A1) |
申请公布日期 |
2001.03.14 |
申请号 |
EP20000640007 |
申请日期 |
2000.07.18 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD. |
发明人 |
GUPTA, SUBHASH;KWOK KEUNG HO, PAUL;SHENG ZHOU, MEI |
分类号 |
H01L21/3205;H01L21/304;H01L21/321;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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