| 摘要 |
The object is the production of high accuracy, high quality photomask or microdevice. A mark (53) is formed in a peripheral area (52) of a mask (Ri) and a control use mask (60) having a mark (63) formed at a position facing said mark and marks (64 to 66) formed in a pattern area (61) is prepared. The projected images of the marks (64 to 66) of the control use mask (60) are measured, the projection magnification is adjusted etc. to correct the imaging characteristics so as to give the smallest amount of offset of projected images of the marks (64 to 66) from their ideal positions, and the position of the projected image of the mark (63) at that time is measured. When transferring the pattern (Pi) of the mask (Ri), the position of the projected image of the mark (53) of the mask (Ri) is measured and the pattern (Pi) of the mask (Ri) is transferred on a photosensitive substrate (4) so that the position is substantially in register with the position of the mark (63) of the control use mask. <IMAGE>
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