| 摘要 |
<p>The invention provides a semiconductor device including a first transistor, the first transistor including a first gate electrode, a first semiconductor layer, a first insulating layer being positioned between the first gate electrode and the first semiconductor layer, a first source electrode being electrically connected to the first semiconductor layer, and a first drain electrode being electrically connected to the first semiconductor layer, the semiconductor device being configured such that:
the first source electrode has a first extending source electrode section and a plurality of second extending source electrode portions, each of the plurality of second extending source electrode portions being connected to the first extending source electrode section;
the first drain electrode has a first extending drain electrode section and a plurality of second extending drain electrode portions, each of the plurality of second extending drain electrode portions being connected to the first extending drain electrode section, and
one of the plurality of second extending drain electrode portions is formed between two of the plurality of second extending source electrode portions, a space between the one of the plurality of second extending drain electrode portions and the two of the plurality of second extending source electrode portions being configured to work as a channel region of the first transistor.</p> |
