PATTERN FOR MEASURING THERMAL CHARGE OF METAL OXIDE SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A pattern for measuring a thermal charge of a metal oxide semiconductor(MOS) transistor is provided to improve reliability regarding a test result of a MOS transistor, by comparing thermal charge characteristics of a single gate edge and a plural gate edge, and by quantitatively estimating an effect of the single gate edge on degradation of a characteristic of the MOS transistor. CONSTITUTION: The first pattern includes the first gate passing over the first active region of a predetermined line width. A plurality of divided patterns includes the second gate which has the same line width as the first gate passing a plurality of active regions formed by dividing the first active region into a plurality of regions widthwise.