| 摘要 |
PURPOSE: A method for fabricating a non-volatile semiconductor memory device is provided to realize a formation of a floating gate having minute patterns. CONSTITUTION: A gate insulating layer(14) is grown in an active region of a silicon substrate(1), and a polysilicon layer(15) for a floating gate is stacked thereon. A nitride pattern(16) is then formed on a portion of the polysilicon layer(15) where the floating gate is not to be formed. Next, a nitride spacer(18) is formed on a sidewall of the nitride pattern(16), and an oxide layer(19) is then formed on a portion of the polysilicon layer(15) where the floating gate is to be formed. Here, the nitride spacer(18) is used as an oxidation mask during a formation of the oxide layer(19), preventing a lateral extension of a bird's beak of the oxide layer(19). Thereafter, the polysilicon layer(15) is etched by using the oxide layer(19) as an etch mask, so that a pattern of the floating gate is formed.
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