发明名称 Semiconductor integrated circuit with driver stabilization using parasitic capacitance
摘要 The semiconductor integrated circuit of this invention includes: a driver including a MOS transistor for driving a load; and a stabilizer for stabilizing a change in a voltage at a source of the MOS transistor due to a gate-source parasitic capacitance of the MOS transistor.
申请公布号 US6201412(B1) 申请公布日期 2001.03.13
申请号 US19980123902 申请日期 1998.07.28
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 IWATA TORU;AKAMATSU HIRONORI;HIRATA TAKASHI
分类号 H03K19/017;(IPC1-7):H03K19/017 主分类号 H03K19/017
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