发明名称 |
Semiconductor integrated circuit with driver stabilization using parasitic capacitance |
摘要 |
The semiconductor integrated circuit of this invention includes: a driver including a MOS transistor for driving a load; and a stabilizer for stabilizing a change in a voltage at a source of the MOS transistor due to a gate-source parasitic capacitance of the MOS transistor.
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申请公布号 |
US6201412(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US19980123902 |
申请日期 |
1998.07.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
IWATA TORU;AKAMATSU HIRONORI;HIRATA TAKASHI |
分类号 |
H03K19/017;(IPC1-7):H03K19/017 |
主分类号 |
H03K19/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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