| 摘要 |
A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
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