发明名称 |
Field effect transistor with controlled body bias |
摘要 |
A field effect transistor (FET) is formed on a silicon on insulator (SOI) substrate in the thin silicon layer above the insulating buried oxide layer. A clock signal defines a clock period with an active portion and a wait portion. The source region and/or the drain region are coupled to a body pumping signal. The body pumping signal includes a negative voltage pulse occurring during the wait portion which sets the voltage of a body region of the FET to a preset voltage during such negative voltage pulse. Decay of the preset voltage is predictable such that operation of the FET can be controlled during the active portion.
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申请公布号 |
US6201761(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US20000491823 |
申请日期 |
2000.01.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WOLLESEN DONALD L. |
分类号 |
G11C5/14;H01L27/12;(IPC1-7):G11C7/02 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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