| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a core transistor and an I/O transistor on the same semiconductor substrate and a structure with a gate length of the I/O transistor reducible, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises the core transistor and the I/O transistor on the same semiconductor substrate (100). The core transistor comprises a gate insulating film (102a), a gate electrode (103a), a side-wall (105a), an extension diffusion layer (104a), and a source-drain diffusion layer (106a). The I/O transistor comprises a gate insulating film (102b), a gate electrode (103b), a side-wall (105b), and a source-drain diffusion layer (106b). A channel region and the source-drain diffusion layer (106b) positioned directly under the gate insulating film (102b) of the I/O transistor are offset in a region directly under the side-wall (105b). COPYRIGHT: (C)2007,JPO&INPIT |
