发明名称 DETERGENT FOR SEMICONDUCTOR PART, CLEANING OF SEMICONDUCTOR PART, COMPOSITION FOR POLISHING AND POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a detergent having a slight load on environment and high cleaning effects on impurities remaining on a semiconductor part such as a semiconductor substrate after chemomechanical polishing(CMP). SOLUTION: This detergent for a semiconductor part comprises at least two kinds of (co)polymers of a (co)polymer having carboxylic acid (salt) groups, a (co)polymer having sulfonic acid (salt) groups and a (co)polymer having phoshonic acid (salt) groups and, as necessary, further contains a phosphonic acid compound therein.
申请公布号 JP2001064685(A) 申请公布日期 2001.03.13
申请号 JP19990286439 申请日期 1999.10.07
申请人 JSR CORP 发明人 BESSHO KEIICHI;HIGAMI MAKOTO;ONO TOSHIO;ISHIKAWA KATSUHIRO
分类号 H01L21/304;C09K3/14;C11D3/14;C11D3/37;C11D7/26;C11D7/32;C11D7/34;C11D7/36;(IPC1-7):C11D7/26 主分类号 H01L21/304
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