Chamber and cleaning process therefor

摘要

A modified processing chamber is disclosed and a process for selectively cleaning the processing chamber by applying energy in a temperature pattern to surfaces of the processing chamber which receive deposits as a result of prior operations conducted within the processing chamber. The processing chamber is cleaned by ion bombardment with heat driven plasma cleaning which is selective to the heated portions of the processing chamber. Also disclosed are various embodiments for applying the temperature pattern to surfaces of the processing chamber, including the use of combustion flames or heat lamps which are positioned to heat surfaces which are to be cleaned. Another embodiment comprises the use of heating elements embedded in the surfaces to be cleaned, and yet another embodiment comprises a susceptor which is heated and radiates heat onto the surfaces to be cleaned.