| 摘要 |
A thin film transistor of this invention has a structure obtained by sequentially stacking, on an insulating substrate, a silicon nitride film, a silicon oxide film, a polysilicon thin film with a channel region and source and drain regions facing each other via the channel region, an insulating film, and a gate electrode. The boron concentration decreases from the channel region toward the silicon nitride film in the silicon oxide film region between the channel region and the silicon nitride film. The silicon oxide film region between the channel region and the silicon nitride film is made up of a first region which is in contact with the channel region and has a boron concentration of 1x1016 atoms/cm3 or more, and a second region between the first region and the silicon nitride film, which has a boron concentration of less than 1x1016 atoms/cm3. The first region has a thickness of 200 Å or less.
|
