Process for reducing waviness in semiconductor wafers

摘要

A process for reducing the waviness of a semiconductor wafer utilizing plasma assisted chemical etching is disclosed. The process includes measuring the surface profile at discrete points on one surface of the wafer independent from the apposing surface, computing a dwell time versus position map based on the measured surface profiles, and selectively removing material from each surface of the wafer by plasma assisted chemical etching to reduce the waviness of the wafer.