Method for manufacturing a semiconductor light emitting device

摘要

A semiconductor light emitting device has at least a substrate, an n-type GaN type semiconductor layer, an active layer, and a p-type GaN type semiconductor layer which are laminated on each other. In a first annealing process, the semiconductor light emitting device is annealing-processed thereby activating the p-type GaN type semiconductor layer. A metal mask is formed to cover an electric current introducing area of a surface of the p-type GaN type semiconductor layer. In a second annealing process the semiconductor light emitting device is annealing-processed thereby inactivating the p-type GaN type semiconductor layer.