| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride sintered body high in thermal conductivity and excellent in electrically insulative property at high temp. and a method for producing the same. SOLUTION: In the method for producing the silicon nitride sintered body, which comprises forming a formed raw material containing a silicon nitride powder, an Mg compound and a sintering aid and sintering the formed raw material at 1,800 to 2,000 deg.C under a nitrogen atmosphere, the formed raw material is prepared so that the amount of Mg is 0.3 to 10 wt.%, expressed in terms of the oxide of Mg and the sintering is carried out by keeping a fixed temp. for at least 0.5 h in the temp. range of 1,400 to 1,700 deg.C, and then raising the temp. up to the sintering temp. |
