发明名称 |
Method for manufacturing even dielectric layer |
摘要 |
A method for manufacturing an even dielectric layer. A substrate having a patterned conductive layer formed thereon is provided. A first dielectric layer with a relatively high dopant dosage is formed on the substrate and the patterned conductive layer. A second dielectric layer with a relatively low dopant dosage is formed on the first dielectric layer. A chemical-mechanical polishing process is formed.
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申请公布号 |
US6200897(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US19990328977 |
申请日期 |
1999.06.06 |
申请人 |
UNITED SEMICONDUCTOR CORP.;UNITED MICROELECTRONICS CORP. |
发明人 |
WANG BRIAN;HSU CHIH-CHING |
分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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