发明名称 Method for manufacturing even dielectric layer
摘要 A method for manufacturing an even dielectric layer. A substrate having a patterned conductive layer formed thereon is provided. A first dielectric layer with a relatively high dopant dosage is formed on the substrate and the patterned conductive layer. A second dielectric layer with a relatively low dopant dosage is formed on the first dielectric layer. A chemical-mechanical polishing process is formed.
申请公布号 US6200897(B1) 申请公布日期 2001.03.13
申请号 US19990328977 申请日期 1999.06.06
申请人 UNITED SEMICONDUCTOR CORP.;UNITED MICROELECTRONICS CORP. 发明人 WANG BRIAN;HSU CHIH-CHING
分类号 H01L21/3105;H01L21/316;(IPC1-7):H01L21/00 主分类号 H01L21/3105
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