| 摘要 |
PURPOSE: A metal patterning method of a thin film type light path control device is provided to form a slope in the exposure step by employing the proximity method in the exposure, thereby effectively preventing the generation of metallic polymer fence without any size change of an initial pattern in a simplified manner. CONSTITUTION: A metal patterning method of a thin film type light path control device includes the steps of forming a metal material layer(310) on a base(300), forming a photoresist layer(320) on the metal material, exposing the photoresist layer by mask proximity exposure after aligning a mask(330) of a certain pattern on the photoresist layer with a distance of several to several tens of micrometer, forming a photoresist pattern with a predetermined slope at respective ends of residual photoresist by removing the photoresist partially by developing the exposed photoresist, forming a metal layer of a predetermined target pattern by removing the metal material partially by using the photoresist pattern as an etching mask, and removing the residual photoresist pattern from the top of the metal layer.
|
