| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
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| 申请公布号 |
US2007202666(A1) |
申请公布日期 |
2007.08.30 |
| 申请号 |
US20070783131 |
申请日期 |
2007.04.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAGAWA HIDEO;SASAGO MASARU;ENDO MASAYUKI;HIRAI YOSHIHIKO |
| 分类号 |
H01L21/36;H01L21/027;H01L21/3105;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
H01L21/36 |
| 代理机构 |
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