发明名称 |
Method of forming a layer and method of removing reaction by-products |
摘要 |
In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.
|
申请公布号 |
US2007202694(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20060589716 |
申请日期 |
2006.10.31 |
申请人 |
SEO JUNG-HUN;HONG JIN-GI;CHOI YUN-HO;KWUN HYUN-CHUL;LEE EUN-TAECK;KIM JIN-HO |
发明人 |
SEO JUNG-HUN;HONG JIN-GI;CHOI YUN-HO;KWUN HYUN-CHUL;LEE EUN-TAECK;KIM JIN-HO |
分类号 |
H01L21/44;H01L21/465 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|