| 摘要 |
<p>PROBLEM TO BE SOLVED: To produce a solar battery which is free from photo-deterioration and stable in photo-energy conversion efficiency by adding Ga as a dopant. SOLUTION: An objective material for the solar battery is Ga-added polycrystalline silicon and the concentration of the Ga in the crystal is preferably 3×1014 to 2×1017 atom/cm3. Though p-type polycrystalline silicon in which B is mainly doped has been used as the polycrystalline silicon for the silicon solar battery, when the polycrystalline, wherein Ga is added in place of B, is used as the substrate of the solar battery, it becomes possible to produce a solar battery which is stable in the conversion efficiency without being affected by the photo-deterioration. The method for adding Ga into a silicon molten liquid in a crucible comprises previously growing a silicon crystal in which Ga is added in a high concentration, then crushing the silicon crystal doped with Ga in high concentration to prepare a dopant and adding the obtained dopant into the silicon molten liquid.</p> |
