| 摘要 |
PROBLEM TO BE SOLVED: To obtain a detergent having a slight load on environment and high cleaning effects on chemomechanical polishing (CMP) for polishing abrasive grains such as silica or alumina remaining on a semiconductor part such as a semiconductor substrate prior to and after the CMP or impurities such as Fe, Mn, Al, Ce, Cu, W or Ti based on metal impurities contained in the CMP or metal wirings, or the like. SOLUTION: This detergent for a semiconductor part consists essentially of a (co)polymer prepared by (co)polymerizing monomer components comprising itaconic acid (salt) and, as necessary, at least one kind of monomer component selected from the group of a monomer having carboxylic acid (salt) group [except the itaconic acid (salt)], a monomer having hydroxyl group and a monomer having a skeleton derived from ethylene oxide or propylene oxide and, as necessary, comprises further a surfactant formulated therein. The monomer having the carboxylic acid (salt) group [except the itaconic acid (salt)] is preferably acrylic acid and/or methacrylic acid.
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