| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need of gas mixing operation in the use and to simplify a refining stage at the time of production by allowing monochlorosilane by an amt. equal to or above the specified amt. to be contained in a silane series compsn. SOLUTION: This raw material for producing a silicon series thin film is composed of a silane series compsn. contg. monochlorosilane of >=10 ppm by a weight standard. The silane series compsn. may contain the other silanes such as a silane halide and monosilane, but, desirably, it contains monosilane of the amt. by which the molar ration between it and monocholorosilane is controlled to 1:99 to 95:5. By using such raw material, by a plasma CVD method, a silicon series thin film is produced. The amorphous silicon film in which residual chlorine content is controlled to 0.005 to 5 atomic % and exhibiting excellent photodeterrioration resistance and sufficient photoelectric characteristics and easily and stably be obtd. at a high speed. The raw material can be produced by distilling the one obtd. by subjecting silane chloride hydride to disproportionation.
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