| 摘要 |
A plasma processing apparatus includes a cathode 54 having a large diameter part 56 and a long thin small diameter part 58, and the upper end surface of the large diameter part 56 faces the plasma forming space 76. The substrate 66 which is to be processed is mounted on the upper end surface of the large diameter part 56. The lower end of the small diameter part 58 is connected via the matching circuit 60 to the high frequency power source 62. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part 56, the first side wall 42 and the insulator 70. The radial line includes the lower surface of the large diameter part 56, the upper surface of the bottom plate 46 and the gap 72 between them. The small diameter coaxial line includes the small diameter part 58, the second side wall 68 and the gap 74. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.
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