发明名称 PROCESS FOR FABRICATING PIEZOELECTRIC ELEMENT
摘要 A method for fabricating a piezoelectric element capable of ensuring high piezoelectric characteristics by preventing generation of unnecessary electric field in a piezoelectric thin film layer during the fabrication process. The method for fabricating a piezoelectric element comprises a first step for depositing a lower electrode layer, a piezoelectric thin film layer and an upper electrode layer sequentially on a substrate, a second step for performing etching including dry etching, a third step for performing polarization by applying a voltage between the lower electrode layer and the upper electrode layer, and a fourth step for segmenting into individual piezoelectric elements wherein the lower electrode layer and the upper electrode layer are held in short circuit state at least when dry etching is performed.
申请公布号 KR20070093102(A) 申请公布日期 2007.09.17
申请号 KR20077015924 申请日期 2007.07.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKAMURA YUKI;MURASHIMA YUJI;YASUMI MASAHIRO;KOMAKI KAZUKI
分类号 H01L41/08;H01L41/09;B41J2/14;B41J2/16;H01L41/04;H01L41/18;H01L41/187;H01L41/22;H01L41/257;H01L41/332 主分类号 H01L41/08
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