发明名称 Bias current generating circuits and methods for integrated circuits including bias current generators that increase and decrease with temperature
摘要 A bias current for an integrated circuit is generated by generating a first bias current that increases with temperature, generating a second bias current that decreases with temperature, and summing the first bias current and the second bias current. Summing may take place by mirroring the first bias current, mirroring the second bias current and summing the mirrored first bias current and the mirrored second bias current. Pull-down circuits also are preferably provided for the circuits that generate the first and second bias currents. The pull-down circuits are responsive to a pulse signal. The pulse signal may be generated from a power-down signal or another signal. Accordingly, bias current generating circuits and methods can have reduced susceptibility to changes in temperature, changes in power supply voltage and/or process variations, and can rapidly produce the bias current.
申请公布号 US6201436(B1) 申请公布日期 2001.03.13
申请号 US19990426733 申请日期 1999.10.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HUR NAK-WON;KIM JONG-SUN
分类号 G11C11/413;G05F3/24;G11C11/407;H01L21/822;H01L27/04;(IPC1-7):G05F1/10 主分类号 G11C11/413
代理机构 代理人
主权项
地址