ПОДЛОЖКА КАРБИДА КРЕМНИЯ И СПОСОБ ПОЛУЧЕНИЯ ПОДЛОЖКИ И ПОЛУПРОВОДНИКОВОЕ УСТРОЙСТВО, ИСПОЛЬЗУЮЩЕЕ ПОДЛОЖКИ

摘要

A silicon carbide thin film is epitaxially grown by an MBE or the like method with silicon atoms 2 being maintained to be in excess of carbon atoms on a growth surface 1a of a silicon carbide crystal in a substrate 1. A silicon carbide substrate with a good crystallinity is thereby achieved at a low temperature with a good reproducibility. This crystal growth is possible at a low temperature of 1300 DEG C or lower, and the productions of a high-concentration doped film, a selectively grown film, and a grown film of a cubic silicon carbide on a hexagonal crystal are achieved. In crystallizing a cubic silicon carbide on a hexagonal crystal, the use of an off-cut surface inclined towards a &lang&1100&rang& direction is effective to prevent an occurrence of twin.