Manufacture of integrated inductor which reduces energy loss through underlying silicon substrate

摘要

Manufacture of integrated inductor comprising radio frequency semiconductor inductor on silicon substrate with reduced energy consumption. A spiral conductive layer is formed over a silicon substrate, a doped region of a second conductive typeis formed in the substrate below the spiral conductive layer. A doped region of the first conductive type is next formed in the substrate around the doped region of the second conductive type. A reverse bias voltage is applied to the doped region of the first conductive type and the first conductive type and the doped region of the second conductive type. The application of the reverse bias voltage creates a depletion region beneath the doped region of the second conductive type and the space between the doped regions which reduces energy through the substrate.