| 摘要 |
The invention concerns a method for electrically conductive bonding between a surface of a first semiconductor element (10) and a surface of a second semiconductor element (12) using heat treatment. The method consists in: pressing said surfaces against each other with at least an intermediate layer (11, 15, 16, 13) of a material designed to ensure, after the heat treatment, an electrically conductive bonding between the two surfaces, the deposited layers being selected so that the heat treatment does not cause a reaction product between said material and the semiconductor elements (10, 12); then in carrying out the heat treatment. For example, the first and second semiconductor elements (10, 12) are SiC, the intermediate layer comprising a tungsten film (11, 13) and a silicon film (15, 16), the resulting mixture (14) comprising WSi2.
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